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INTEGRATED CIRCUITS
SA631 1GHz low voltage LNA and mixer
Product specification IC17 Data Handbook 1998 Jan 08
Philips Semiconductors
Philips Semiconductors
Product specification
1GHz low voltage LNA and mixer
SA631
DESCRIPTION
The SA631 is a combined low-noise BiCMOS amplifier, and mixer designed for high-performance low-power communication systems from 800-1000MHz. The low-noise preamplifier has a 1.7dB noise figure at 881MHz with 15dB gain and an IP3 intercept of -7dBm at the input. The gain is stabilized by on-chip compensation to vary less than 0.2dB over -40 to +85C temperature range. The wide-dynamic-range mixer has a 10dB noise figure and IP3 of +3.3dBm at the input at 881MHz. The nominal current drawn from a single 3V supply is 8.3mA. Additionally, the entire circuit can be powered down to further reduce the supply current to less than 20A.
PIN CONFIGURATION
PD1 PD2 GND LO OUT GND GND GND GND GND 1 2 3 4 5 6 7 8 9 20 MIXER OUT 19 MIXER OUT 18 GND 17 MIXER IN 16 GND 15 LNA IN 14 GND 13 LNA OUT 12 VCC 11 GND
FEATURES
* Low current consumption * Outstanding gain and noise figure * Excellent gain stability versus temperature and supply voltage * LNA and mixer power down capability * Designed in Philips state of the art BiCMOS QUBIC process
APPLICATIONS
GND 10
SR00124
Figure 1. Pin Configuration
* 900MHz cellular and cordless front-end * Spread spectrum receivers * RF data links * UHF frequency conversion * Portable radio
ORDERING INFORMATION
DESCRIPTION 20-Pin Shrink Small Outline Package (Surface-mount, SSOP) TEMPERATURE RANGE -40 to +85C ORDER CODE SA631DK DWG # SOT266-1
BLOCK DIAGRAM
MIXER OUT MIXER OUT GND MIXER IN GND LNA IN GND LNA OUT VCC GND
20
19
18
17
16
15
14
13
12
11
LNA
1
PD1
2
PD2
3
GND
4
LO OUT
5
GND
6
GND
7
GND
8
GND
9
GND
10
GND
SR01588
Figure 2. SA631 Block Diagram
1998 Jan 08
2
853-2045 18847
Philips Semiconductors
Product specification
1GHz low voltage LNA and mixer
SA631
ABSOLUTE MAXIMUM RATINGS
SYMBOL VCC VIN PD TJMAX PMAX TSTG Supply voltage1 Voltage applied to any other pin Power dissipation, Tamb = 25C (still 20-Pin Plastic SSOP air)2 980 150 +20 -65 to +150 mW C dBm C PARAMETER RATING -0.3 to +6 -0.3 to (VCC + 0.3) UNITS V V
Maximum operating junction temperature Maximum power input/output Storage temperature range
NOTES: 1. Transients exceeding 8V on VCC pin may damage product. 2. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance, JA: 20-Pin SSOP = 110C/W 3. Pins 19 and 20 are ESD sensitive (mixer outputs).
RECOMMENDED OPERATING CONDITIONS
SYMBOL VCC Tamb TJ Supply voltage Operating ambient temperature range Operating junction temperature PARAMETER RATING 2.7 to 5.5 -40 to +85 -40 to +105 UNITS V C C
DC ELECTRICAL CHARACTERISTICS
VCC = +3.0V, Tamb = 25C; unless otherwise stated. LIMITS SYMBOL PARAMETER TEST CONDITIONS MIN Full power-on ICC Supply current LNA powered-down Full power-down VT VIH VIL IIL IIH PD logic threshold voltage Logic 1 level Logic 0 level PD1 input current PD2 input current Enable = 0.4V Enable = 2.4V 1.2 2.0 -0.3 10 10 TYP 8.3 5.2 20 1.6 1.8 VCC 0.8 MAX mA mA A V V V A A UNITS
1998 Jan 08
3
Philips Semiconductors
Product specification
1GHz low voltage LNA and mixer
SA631
AC ELECTRICAL CHARACTERISTICS
VCC = +3.0V, Tamb = 25C; RFIN = 881MHz, fVCO = 964MHz; unless otherwise stated. LIMITS SYMBOL Low Noise Amplifier fRF S21 S21 S21/T S21/f S12 S11 S22 P-1dB IP3 NF tON tOFF Mixer PGC S11M NFM P-1dB IP3M IP2INT PRFM-IF PLO-IF PLO-RFM PLO-RF Mixer power conversion gain: RP = RL = 1.2k Mixer input match Mixer SSB noise figure Mixer input 1dB gain compression Mixer input third order intercept Mixer input second order intercept Mixer RF feedthrough LO feedthrough to IF LO to mixer input feedthrough LO to LNA input feedthrough RFIN = -32dBm LO = -0dBm fRF = 881MHz, fLO = 964MHz, fIF = 83MHz Ext. impedance matching req. 9.6 -10 10 -14.5 3.3 38 -45 -23 -32 -42 dB dB dB dBm dBm dBm dBm dBm dBm dBm RF input frequency range Amplifier gain Amplifier gain in power-down mode Gain temperature sensitivity enabled Gain frequency variation Amplifier reverse isolation Amplifier input match Amplifier output match Amplifier input 1dB gain compression Amplifier input third order intercept Amplifier noise figure Amplifier turn-on time (Enable Lo Hi) Amplifier turn-off time (Enable Hi Lo) 800MHz - 1.0GHz @ 881 MHz With ext. impedance matching 800 15 -28 0.006 0.013 -28 -10 -10 -20 -7 1.7 120 0.3 1000 MHz dB dB dB/C dB/MHz dB dB dB dBm dBm dB s s PARAMETER TEST CONDITIONS -3s TYP +3s UNITS
Overall System GSYS System gain LNA + Mixer 23.9 24.6 25.3 dB
1998 Jan 08
4
Philips Semiconductors
Product specification
1GHz low voltage LNA and mixer
SA631
Table 1. Power ON/OFF Control Logic
PD1 0 0 1 or open 1 or open PD2 0 1 or open 0 1 or open Full chip power-down Mixer on, LNA power-down Standby (bias on) Full chip power-on (default)
IFOUT C3 6.8pF C16 10pF C15 10pF
L1 560nH L6 12nH C2 10nF C10 2.2pF
C1 100pF
L4 560n
L3 6.8nH
C11 10nF C14 6.8pF 17 MIXER IN 16 GND 15 LNA IN
C8 10nF C13 33pF
+ -
VCC 3V C9 0.1F
20 MIXER OUT
19 MIXER OUT
18 GND
14 GND
13 LNA OUT
12 VCC
11 GND
SA631
PD1 1
PD2 2
GND 3
LOOUT 4
GND 5
GND 6
GND 7
GND 8
GND 9
GND 10
C12 100pF VCOOUT
SR01589
Figure 3. SA631 Application Circuit
1998 Jan 08
5
Philips Semiconductors
Product specification
1GHz low voltage LNA and mixer
SA631
PERFORMANCE CHARACTERISTICS
-13.0 -27.0 -40C
-13.5
-27.5
-28.0 -14.0 MIXER 1dB (dBm) LNA GAIN (dB) 85C -14.5 -40C -15.0 25C -28.5
25C
-29.0 -29.5 85C -30.0
-15.5 -30.5 -16.0 2.5 3 3.5 4 VCC (V) 4.5 5 5.5 -31.0 2.5 0
3
3.5
Mixer 1dB Compression vs VCC
6.0 5.0 4.0 3.0 MIXER IP3 (dBm) 25C -40C
LNA Gain (Disabled) vs VCC
-2 -3 -4 -5 LNA IP3 (dBm) -6 85C -7 -8 -9 -10 -11 -40C -12 2.5 25C
4 VCC (V)
4.5
5
5.5
2.0 1.0 85C 0.0 -1.0 -2.0 -3.0 -4.0 2.5 3 3.5 4 VCC (V) 4.5 5 5.5
3
3.5
Mixer IP3 vs VCC
-15 -16 -17 -18 LNA 1dB (dBm) -19 -20 25C -21 -22 -40C -23 -24 -25 2.5 85C
LNA IP3 vs VCC
4 VCC (V)
4.5
5
5.5
3
3.5
LNA 1dB Compression vs VCC Figure 4.
4 VCC (V)
4.5
5
5.5
SR01590
1998 Jan 08
6
Philips Semiconductors
Product specification
1GHz low voltage LNA and mixer
SA631
PERFORMANCE CHARACTERISTICS
9.8 9.4 9.0 LO to LNA IN (dBm) 8.6 25C Icc (mA) 8.2 7.8 7.4 7.0 6.6 -48 6.2 5.8 2.5 -49 2.5 3 3.5 4 VCC (V) 4.5 5 5.5 -40C -47 85C -39 -40 -41 -42 -40C -43 -44 -45 -46 85C 25C
3
3.5
4 VCC (V)
4.5
5
5.5
LO to LNA In Feedthrough vs VCC
ICC vs VCC and Temperature
11.0 10.5 10.0 9.5 MIXER GAIN (dB) 9.0 8.5 8.0 7.5 7.0 6.5 6.0 2.5 25C LO to IF (dBm) -40C -20 -21 -22 -23 -40C -24 -25 -26 -27 -28 -29 -30 2.5 25C
85C
85C
3
3.5
4 VCC (V)
4.5
5
5.5
3
3.5
Mixer Power Gain vs VCC
-28.0
4 VCC (V)
4.5
5
5.5
LO to IF Feedthrough vs VCC
-30.0
25C -40C
LO to MIXER IN (dBm)
-32.0
-34.0 85C
-36.0
-38.0
-40.0 -42.0 2.5 3 3.5 4 VCC (V) 4.5 5 5.5
LO to Mixer In Feedthrough vs VCC Figure 5.
SR01591
1998 Jan 08
7
Philips Semiconductors
Product specification
1GHz low voltage LNA and mixer
SA631
PERFORMANCE CHARACTERISTICS
-42.0 15.6 15.4 -43.0 15.2 MIXER IN to IF (dBm) -44.0 LNA GAIN (dB) 25C -40C 85C 15.0 25C 14.8 14.6 14.4 85C 14.2 -47.0 14.0 -48.0 2.5 13.8 3 3.5 4 VCC (V) 4.5 5 5.5 13.6 2.5 3 3.5 4 VCC (V) 4.5 5 5.5 -40C
-45.0
-46.0
Mixer In to IF Feedthrough vs VCC
LNA Gain (Enabled) vs VCC
11.0 10.8 10.6 MIXER NOISE FIGURE (dB) 10.4 10.2 25C 10.0 9.8 -40C 9.6 9.4 9.2 9.0 2.5 85C LNA NOISE FIGURE (dB) 2.0 1.9 85C 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 2.5 -40C 25C
3
3.5
4 VCC (V)
4.5
5
5.5
3
3.5
4 VCC (V)
4.5
5
5.5
Mixer Noise Figure vs VCC Figure 6.
LNA Noise Figure vs VCC
SR01592
1998 Jan 08
8
Philips Semiconductors
Product specification
1GHz low voltage LNA and mixer
SA631
CH2
S11
1 U FS
1:
40.1 -129.6 200 MHz 24.0 -62.9 400 MHz 18.6 -37.4 600 MHz 14.1 10.5 pF -16.7 900 MHz
2:
3:
4:
4
1 3 2
START
100. 000 000 MHz
STOP
1 200. 000 000 MHz
SR01593
Figure 7. Typical S11 of LNA at 3V
CH1 S22 1 U FS
1:
40.5 -28.2 700 MHz 36.1 -12.4 800 MHz 34.7 3.5 900 MHz 34.9 3.74 661.4 pH 900 MHz
2:
3: 4
4:
1 2 3
START
700. 000 000 MHz
STOP
1 200. 000 000 MHz
SR01253
Figure 8. Typical S22 of LNA at 3V
1998 Jan 08
9
Philips Semiconductors
Product specification
1GHz low voltage LNA and mixer
SA631
CH1
S21
10 U FS
1: 3 2: 4 3:
6.7 U 142.5 200 MHz 5.9 U 112.3 400 MHz 5.9 U 78.1 600 MHz 4.5 U 21.2 900 MHz
2 1
4:
START
100. 000 000 MHz
STOP
1 200. 000 000 MHz
SR01254
Figure 9. Typical S21 of LNA at 3V
CH2 S12 50 mU FS
4
1:
1.9 mU 83.0 200 MHz 1.6 mU 133.5 400 MHz 11.4 mU 141.5 600 MHz 27.9 mU 106.1 900 MHz
2:
3: 3 21 4:
START
100. 000 000 MHz
STOP
1 200. 000 000 MHz
SR01255
Figure 10. Typical S12 of LNA at 3V
1998 Jan 08
10
Philips Semiconductors
Product specification
1GHz low voltage LNA and mixer
SA631
CH1
S11
1 U FS
1:
122.8 -144.9 200 MHz 58.0 -86.8 400 MHz 45.9 -62.3 600 MHz 26.6 -43.2 4.085 pF 900 MHz
2:
3:
4:
1 4 3 2
START
100. 000 000 MHz
STOP
1 200. 000 000 MHz
SR01256
Figure 11. Typical S11 of Mixer at 3V
1998 Jan 08
11
Philips Semiconductors
Product specification
1GHz low voltage LNA and mixer
SA631
Table 2. Typical S-Parameters of LNA at 3V
LNA Freq (MHz) 100 122 144 166 188 210 232 254 276 298 320 342 364 386 408 430 452 474 496 518 540 562 584 606 628 650 672 694 716 738 760 782 804 826 848 870 892 914 936 958 980 1002 1024 1046 1068 1090 1112 1134 1156 1178 1200 |S11| (U) 0.86 0.86 0.85 0.83 0.82 0.81 0.80 0.79 0.78 0.76 0.75 0.73 0.71 0.70 0.69 0.68 0.69 0.68 0.67 0.66 0.65 0.63 0.62 0.62 0.61 0.61 0.60 0.60 0.59 0.59 0.59 0.59 0.59 0.59 0.59 0.59 0.59 0.59 0.59 0.59 0.59 0.59 0.59 0.59 0.59 0.59 0.59 0.58 0.58 0.57 0.57 1998 Jan 08
12
Philips Semiconductors
Product specification
1GHz low voltage LNA and mixer
SA631
Table 3. Typical S-Parameters of Mixer at 3V
Mixer Freq (MHz) 100 122 144 166 188 210 232 254 276 298 320 342 364 386 408 430 452 474 496 518 540 562 584 606 628 650 |S11| (U) 0.73 0.73 0.72 0.72 0.72 0.71 0.70 0.70 0.69 0.68 0.67 0.66 0.64 0.63 0.62 0.61 0.59 0.58 0.57 0.56 0.55 0.55 0.54 0.54 0.54 0.54 1998 Jan 08
13
Philips Semiconductors
Product specification
1GHz low voltage LNA and mixer
SA631
SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm
SOT266-1
1998 Jan 08
14
Philips Semiconductors
Product specification
1GHz low voltage LNA and mixer
SA631
NOTES
1998 Jan 08
15
Philips Semiconductors
Product specification
1GHz low voltage LNA and mixer
SA631
Data sheet status
Data sheet status Objective specification Preliminary specification Product specification Product status Development Qualification Definition [1] This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make chages at any time without notice in order to improve design and supply the best possible product. This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.
Production
[1] Please consult the most recently issued datasheet before initiating or completing a design.
Definitions
Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
Disclaimers
Life support -- These products are not designed for use in life support appliances, devices or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Philips Semiconductors 811 East Arques Avenue P.O. Box 3409 Sunnyvale, California 94088-3409 Telephone 800-234-7381 (c) Copyright Philips Electronics North America Corporation 1998 All rights reserved. Printed in U.S.A. Date of release: 01-98 Document order number: 9397 750 03414
Philips Semiconductors
1998 Jan 08 16

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